HI-SINCERITY
MICROELECTRONICS CORP.
Spec.
No.
: MOS200402 Issued Date : 2004.
04.
01 Revised Date : 2005.
05.
12 Page No.
: 1/6
H06N60 Series
N-Channel Power Field Effect
Transistor
Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.
In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.
The new energy efficient design also offers a drain-to-source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suit...