TSM8588CS Taiwan Semiconductor Complementary N & P-Channel Power MOSFET FEATURES ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Building technologies ● DC Fan ● Motor drives KEY PERFORMANCE PARAMETERS PARAMETER TYPE VALUE UNIT Q1 60 VDS Q2 -60 V VGS = 10V Q1 103 RDS(on) (max) VGS = 4.
5V VGS = -10V Q2 122 180 mΩ VGS = -4.
5V 220 Q1 4.
4 Qg Q2 4.
6 nC SOP-8 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Q1 Q2 Drain-Source Voltage Ga...

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