High Voltage Insulated Gate Bipolar
Transistor：HVIGBT
CM1200HCB-34N
HIGH POWER SWITHCHING USE INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar
Transistor) Modules
CM2400HCB-34N
IC ·························································· 1200 A VCES ···················································· 1700 V 1-element in pack Insulated type CSTBTTM / Soft recovery diode AlSiC baseplate
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Publication Date : December 2015
(HVM-1053-B)
1
High Voltage Insulated Gate Bipolar
Transistor：HVIGBT
CM1200HCB-34N
HIGH POW...