| Part Number | CME7660-203 |
| Manufacturer | Skyworks |
| Title | Silicon Schottky Barrier Diodes |
| Description | Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They are made by the deposition of a su... |
| Features |
Available in both P-type and N-type low barrier designs Low 1/f noise Packages rated MSL1, 260 C per JEDEC J-STD-020 Description Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They are made by the deposition of a suitable barrier me... |
| File Size | 578.69KB |
| Datasheet |
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CME7660-207 : Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. P-type silicon is used to obtain superior 1/f noise characteristics. N-type silicon is also available. Packaged diodes are suitable for use in waveguide, coaxial, and stripline applications. The choice of N- and P-type silicon allows the designer to optimize the silicon material for the intended application: Doppler mixers and .