| Part Number | IS42S81600F |
| Manufacturer | ISSI |
| Title | 128Mb SYNCHRONOUS DRAM |
| Description | IS42/45S81600F IS42/45S16800F 16Mx8, 8Mx16 128Mb SYNCHRONOUS DRAM SEPTEMBER 2019 FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchrono... |
| Features |
• Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S81600F 3.3V 3.3V IS42/45S16800F 3.3V 3.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, ful... |
| File Size | 824.83KB |
| Datasheet |
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IS42S81600A : A0-A11 A0-A8, A10 BA0, BA1 I/O0 to I/O7 CLK CKE CS RAS CAS Row Address Input Column Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command WE DQM VDD Vss VDDQ VssQ NC Write Enable x 8 Lower Bye, Input/Output Mask Power Ground Power Supply for I/O Pin Ground for I/O Pin No Connection Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 ADVANCED INFORMATION Rev. 00A 06/01/02 3 IS42S81600A, IS42S16800A, IS42S32400A IS42LS81600A, IS42LS16800A, IS42LS32400A PIN CONFIGURATIONS 54-Ball FBGA for x16 ISSI 7 8 9 ® 1 2 3 4 5 6 A Vss B I/O14 C I/O12 D I/O10 E I/O8 F UDQM G NC/A12 H A8 J Vss.
IS42S81600B : A0-A11 A0-A9 BA0, BA1 DQ0 to DQ7 CLK CKE CS RAS CAS Row Address Input Column Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command WE DQM VDD Vss VDDQ VssQ NC Write Enable Data Input/Output Mask Power Ground Power Supply for I/O Pin Ground for I/O Pin No Connection Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. E 05/01/06 3 IS42S81600B, IS42S16800B ISSI ® PIN CONFIGURATIONS 54 pin TSOP - Type II for x16 VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 VDD LDQM WE CAS RAS CS www.DataSheet4U.com 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 2.
IS42S81600D : IS42S81600D IS42S16800D 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM JULY 2008 FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply IS42S81600D VDD VDDQ 3.3V 3.3V IS42S16800D 3.3V 3.3V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • Auto Refresh (CBR) • Self Refresh with programmable refresh periods • 4096 refresh cycles every 64 ms • Random column address every clock cycle • Programmable CAS latency (2, 3 clocks) • Burst read/write and burst read/single write operations c.