PMN120ENEA
60 V, N-channel Trench MOSFET
29 April 2019
Product data sheet
1.
General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits
• Logic-level compatible • Extended temperature range Tj = 175 °C • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection 2 kV HBM (class H2) • AEC-Q101 qualified
3.
Applications
• Relay driver • High-speed line driver • Low-side load switch • Switching circuits
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain ...