BAS521

BAS52 : BAS52... Silicon Schottky Diode
Medium current rectifier Schottky diode
Low forward voltage at 200mA
High reverse voltage BAS52-02V 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAS52-02V Parameter Diode reverse voltage Forward current Package SC79 Configuration single Symbol VR IF IFSM IFAV Ptot Tj Tstg Symbol RthJS Marking y Value 45 750 2000 500 500 150 -65 ... 150 Value Unit K/W mW °C Unit V mA Maximum Ratings at TA = 25°C, unless otherwise specified Surge forward current (t = 100µs) Average forward current (50/60Hz, sinus) Total power dissipation TS
110°C Junction temperature Storage temperature Thermal Resistance Parameter Juncti.

BAS52-02V : BAS52... Silicon Schottky Diode
Medium current rectifier Schottky diode
Low forward voltage at 200mA
High reverse voltage BAS52-02V 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAS52-02V Parameter Diode reverse voltage Forward current Package SC79 Configuration single Symbol VR IF IFSM IFAV Ptot Tj Tstg Symbol RthJS Marking y Value 45 750 2000 500 500 150 -65 ... 150 Value Unit K/W mW °C Unit V mA Maximum Ratings at TA = 25°C, unless otherwise specified Surge forward current (t = 100µs) Average forward current (50/60Hz, sinus) Total power dissipation TS
110°C Junction temperature Storage temperature Thermal Resistance Parameter Juncti.

BAS520-02V : BAS520-02V www.DataSheet4U.com Vishay Semiconductors Small Signal Schottky Diode Features • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. • Space saving SOD-523 package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 1 e3 2 1 2 19020 Mechanical Data Case: SOD-523 Plastic case Molding Compound Flammability Rating: UL 94 V-0 Terminals: High temperature soldering guaranteed: 260 °C/10 sec. at terminals Weight: approx. 1.6 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k pe.

BAS521 : The BAS521 is a high-voltage switching diode fabricated in planar technology and encapsulated in an ultra small SOD523 (SC-79) plastic SMD package. PINNING BAS521 handbook, halfpage1 Marking code: L4. The marking bar indicates the cathode. 
PIN 1 2 Top view DESCRIPTION cathode anode 2 MAM408 Fig.1 Simplified outline (SOD523; SC-79), and symbol. LIMITING VALUES In accordance with the absolute Maximum Rating System (IEC 60134). SYMBOL VR VRRM IF IFRM IFSM Ptot Tstg Tj Tamb Note 1. Ts is the temperature at the soldering point of the cathode tab. PARAMETER continuous reverse voltage repetitive peak reverse voltage continuous forward current repetitive peak forward current non-repeti.

BAS521 : Features • Fast Switching Speed: max. 50ns • High Reverse Breakdown Voltage: 300V • Low Leakage Current: 100nA at Room Temperature • Ultra-Small Plastic SMD Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) BAS521 HIGH VOLTAGE SWITCHING DIODE Mechanical Data • Case: SOD-523 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: Cathode Bar • Terminals: Finish—Matte Tin Annealed over Alloy 42 Leadframe. • Solderable per MIL-STD-202, Method 208 • Weight: 0.0014 grams (Approximate) SOD523 2 Top View 1 Devic.

BAS521 : The BAS521 is a high-voltage switching diode fabricated in planar technology and encapsulated in an ultra small SOD523 (SC-79) plastic SMD package. PINNING PIN 1 2 DESCRIPTION cathode anode LIMITING VALUES In accordance with the absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS VR VRRM IF IFRM IFSM Ptot Tstg Tj Tamb continuous reverse voltage repetitive peak reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation storage temperature junction temperature operating ambient temperature Ts ≤ 90 °C; note 1 tp = 1 ms; δ = 0.25 tp = 1 µs; square wave; Tj = 25 °C prior to surge Ts ≤ 90 °C; n.

BAS521 : SYMBOL Continuous Reverse Voltage VR Repetitive Peak Reverse Voltage VRRM Continuous Forward Current Ts 90 ºC Repetitive Peak Forward Voltage tP = 1ms; δ = 0.25 *IF IFRM Non Repetitive Peak Forward Current tp=1µs, Square wave, Tj=25ºC Prior to Surge IFSM Total Power Dissipation Ts=90ºC *ptot Storage Temperature Tstg Junction Temperature Tj Operating Ambient Temperature Tamb THERMAL RESISTANCE Junction to Solder Point **Rth (j-s) Junction to Ambient in free air Rth (j-a) VALUE 300 300 250 1.0 4.5 500 - 65 to +150 150 - 65 to +150 120 500 UNIT V V mA A A mW oC oC oC K/W K/W *Ts is the temperature at the soldering point of the cathode tab, ** Soldering point of the Ct.

BAS521 : SMD Type Diodes Switching Diodes BAS521 (KAS521) ■ Features ● High switching speed: trr ≤ 50 ns ● High reverse voltage: VR ≤ 300 V ● Repetitive peak forward current: IFRM ≤ 1 A ● High-speed switching ● High-voltage switching 1 cathode 2 anode SOD-523 1.2 +0.1 -0.1 + - +0.050.3 -0.05 0.6 +0.1 -0.1 +0.050.8 -0.05 1.6 +0.1 -0.1 0.77max +0.050.1 -0.02 0.07max Unit: mm ■ Absolute Maximum Ratings Ta = 25℃ Parameter Repetitive Peak Reverse Voltage Reverse Voltage Forward Current @ Tsp ≤ 90 °C Repetitive Peak Forward Current Non-repetitive peak forward surge current (t=1us) Power Dissipation Thermal Resistance Junction to Ambient Thermal Resistance Junction to Solder Point Junct.

BAS521B : High-voltage switching diode, in an ultra small SOD523 (SC-72) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current: IR ≤ 100 nA • High reverse voltage: VR ≤ 200 V • Low capacitance: Cd ≤ 2 pF • Ultra small and leadless SMD plastic package • AEC-Q101 qualified 3. Applications • High-speed switching • General-purpose switching • Voltage clamping • Reverse polarity protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ IF VRRM forward current Tj = 25 °C repetitive peak reverse voltage [1] - - VR reverse voltage -- VF forward voltage IF = 200 mA;.

BAS521LP : NOT RECOMMENDED FOR NEW DESIGN CONTACT US BAS521LP HIGH VOLTAGE SWITCHING DIODE Features • Fast Switching Speed: Maximum of 50ns • High Reverse Breakdown Voltage: 325V • Low Leakage Current: Maximum of 50nA when VR = 5V or Maximum of 150nA when VR = 250V at Room Temperature • Ultra Small Plastic SMD Package: 1.0mm x 0.6mm x 0.5mm • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. "Green" Device (Note 3) Mechanical Data • Case: X1-DFN1006-2 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish - NiPdAu over Copper Leadframe. Solderable per M.

BAS521WT : Cathode Anode 2 a Top View Marking Code: "a" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non-Repetitive Peak Forward Current (1 µs) Power Dissipation Junction Temperature Storage Temperature Range Symbol VRRM VR IF IFRM IFSM Ptot TJ Ts Value 300 300 225 625 4 250 150 - 65 to + 150 Unit V V mA mA A mW O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Breakdown Voltage at IR = 100 µA Reverse Current at VR = 250 V Reverse Recovery Time at IF = IR = 30 mA, RL = 100 Ω, irr = 0.1 IR Total Capacitance at VR .