PMXB43UNE
20 V, N-channel Trench MOSFET
19 September 2013
Product data sheet
1.
General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits
• Trench MOSFET technology • Leadless ultra small and thin SMD plastic package: 1.
1 × 1.
0 × 0.
37 mm • Exposed drain pad for excellent thermal conduction • Very low Drain-Source on-state resistance RDSon = 42 mΩ in high density • 1 kV ESD protected
3.
Applications
• Low-side load switch and charging switch for portable devices • Power management in battery-driven portables • LED driver • ...