 Advanced Process Technology  Ultra Low On-Resistance  Isolated Package  High Voltage Isolation = 2.
5KVRMS   Sink to Lead Creepage Dist.
= 4.
8mm  Fully Avalanche Rated  Lead-Free IRFI3205PbF HEXFET® Power MOSFET   VDSS 55V RDS(on) 0.
008 ID 64A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the...

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