DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS4240V 40 V low VCEsat
NPN transistor
Product data sheet
2003 Jan 30
NXP Semiconductors
40 V low VCEsat
NPN transistor
Product data sheet
PBSS4240V
FEATURES
• Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • High efficiency leading to reduced heat generation • Reduced printed-circuit board area requirements.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO IC ICRP RCEsat
collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance
MAX.
UNIT 40 V 2A 2A 190 mΩ
APPLICATIONS
• Power management: – DC-DC converter –...