PBSS4160X
60 V, 1 A
NPN low VCEsat BISS
transistor
23 May 2017
Product data sheet
1. General description
NPN low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High energy efficiency due to less heat generation • AEC-Q101 qualified
3. Applications
• DC-to-DC conversion • Supply line switches • Battery charger • LCD backlighting • Driver in low supply voltage applications (e.g. lamps and LEDs) • Inductive load driver (e.g. relays, buzzers and motors)
4. Quick reference data
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