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Part Number
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SSM6J507NU |
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Manufacturer
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Toshiba |
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Description
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Silicon P-Channel MOSFET |
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Published
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Jul 27, 2019 |
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Detailed Description
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MOSFETs Silicon P-Channel MOS (U-MOS)
SSM6J507NU
1. Applications
• Power Management Switches
2. Features
(1) 4 V gate d...
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Datasheet
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SSM6J507NU
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Overview
MOSFETs Silicon P-Channel MOS (U-MOS)
SSM6J507NU
1.
Applications
• Power Management Switches
2.
Features
(1) 4 V gate drive voltage.
(2) Low drain-source on-resistance
: RDS(ON) = 20 mΩ (max) (@VGS = -10 V) RDS(ON) = 28 mΩ (max) (@VGS = -4.
5 V) RDS(ON) = 32 mΩ (max) (@VGS = -4.
0 V)
3.
Packaging and Pin Assignment
UDFN6B
SSM6J507NU
1.
2.
5.
6 Drain 3.
Gate 4.
Source
©2015 Toshiba Corporation
1
Start of commercial production
2015-05
2015-11-10 Rev.
2.
0
SSM6J507NU
4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS -30 V
Gate-source voltage
VGSS
-25 / +20
Drain current (DC)
(Note 1)
ID
-10 A
Dra...
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