PSMN1R0-40YSH
N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in
LFPAK56E using NextPower-S3
Schottky-Plus technology
25 April 2019
Product data sheet
1.
General description
290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology.
This product has been designed and qualified for high performance power switching applications.
2.
Features and benefits
• 290 A continuous ID(max) • Avalanche rated, 100% tested • NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery' • Low QRR, QG and QGD for high system efficiency and low EMI designs •
Schottky-Plus body-diode, gives so...