NX138BK Datasheet

NX138BK N-channel MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protect.

Features

• Low threshold voltage
• Very fast switching
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 60 V VGS gate-source voltage -20 - 20 V ID drain current VGS = 10 V; Tamb = 25 °C [1] - - 265 mA Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 200 mA; Tj = 25 °C resistance - 2.1 3.5 Ω [1] Dev.