PMN70EPE
30 V, P-channel Trench MOSFET
23 May 2017
Product data sheet
1.
General description
P-channel enhancement mode Field-Effect
Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits
• Trench MOSFET technology • Logic-level compatible • Very fast switching • Enhanced power dissipation capability of 1.
4 W • ElectroStatic Discharge (ESD) protection 2 kV HBM
3.
Applications
• Relay driver • High-speed line driver • High-side loadswitch • Switching circuits
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain curren...