PMPB12UNE
20 V, N-channel Trench MOSFET
12 April 2016
Product data sheet
1.
General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits
• Trench MOSFET technology • Low threshold voltage • Exposed drain pad for excellent thermal conduction • Tin-plated 100% solderable side pads for optical solder inspection • ElectroStatic Discharge (ESD) protection 1 kV HBM
3.
Applications
• LED driver • Power management • Low-side loadswitch • Switching circuits
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter...