PMV160UP
20 V, 1.
2 A P-channel Trench MOSFET
Rev.
2 — 6 December 2011
Product data sheet
1.
Product profile
1.
1 General description
P-channel enhancement mode Field-Effect
Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits
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8 V RDSon rated Very fast switching
Trench MOSFET technology
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3 Applications
Relay driver High-speed line driver
High-side loadswitch Switching circuits
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4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics
Tj = 2...