PMV16XN
20 V, N-channel Trench MOSFET
11 November 2014
Product data sheet
1.
General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits
• Trench MOSFET technology • Low threshold voltage • Very fast switching • Enhanced power dissipation capability of 1200 mW
3.
Applications
• LED driver • Power management • Low-side load switch • Switching circuits
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-stat...