PMV35EPE
30 V, P-channel Trench MOSFET
6 July 2016
Product data sheet
1.
General description
P-channel enhancement mode Field-Effect
Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits
• Logic level compatible • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection 2 kV HBM
3.
Applications
• Relay driver • High-speed line driver • High-side loadswitch • Switching circuits
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source...