PMV65XPE
20 V, P-channel Trench MOSFET
25 April 2014
Product data sheet
1.
General description
P-channel enhancement mode Field-Effect
Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits
• Trench MOSFET technology • Very fast switching • Enhanced power dissipation capability: Ptot = 890 mW • ElectroStatic Discharge (ESD) protection 2 kV HBM
3.
Applications
• Relay driver • High speed line driver • High-side loadswitch • Switching circuits
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS ...