PMZ950UPE
20 V, P-channel Trench MOSFET
10 July 2014
Product data sheet
1.
General description
P-channel enhancement mode Field-Effect
Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits
• Trench MOSFET technology • Leadless ultra small and ultra thin SMD plastic package: 1.
0 × 0.
6 × 0.
48 mm • ElectroStatic Discharge (ESD) protection 1 kV HBM • Drain-source on-state resistance RDSon = 1.
02 Ω
3.
Applications
• Relay driver • High-speed line driver • High-side load switch • Switching circuits
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VDS drain-...