BUK9628-100A
N-channel TrenchMOS logic level FET
Rev.
02 — 26 April 2011
Product data sheet
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Product profile
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1 General description
Logic level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
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2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low on-state resistance
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3 Applications
Automotive and general purpose power switching
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4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain curr...