ＲＴＡＮ４３０Ｘ SERIES
TRAwNwSwIS.
DTOatRaSWheITeHt4UR.
EcSoImSTOR FOR MUTING APPLICATION
SILICON
NPN EPITAXIAL TYPE
FEATURE
・Built-in bias resistor (R1=4.
7kΩ) ・Small package for easy mounting.
・High reverse hFE ・Small collector to emitter saturation voltage.
VCE(sat)=10mV(TYP.
)（@IC=10mA/IB=0.
5mA） ・Low on Resistance
Ron=0.
80Ω(TYP.
)（@VI=5V）
APPLICATION
muting circuit , switching circuit
OUTLINE DRAWING
RTAN430T2 (PRELIMINARY)
0.
2 0.
8 0.
2
Unit：mm
RTAN430M
2.
1 0.
425 1.
25 0.
425
0.
25 2.
0 1.
3 0.
65 0.
65
0.
3
① ②③
① ②③
1.
2 0.
8 0.
4 0.
4
0.
9 0.
7 0～0.
1 0.
15
0.
5
EQUIVALENT CIRCUIT
R1 B (IN)
C (OUT)
E
(GND)
JEITA, JEDEC：－ ISAHAYA：T-USM TERMINAL CONNECTOR
①：BASE ②：EMITTER ③：COLLECTOR
RTAN430U
1.
6 0.
4 ...