| Part Number | MRF1K50H |
| Manufacturer | NXP |
| Title | RF Power LDMOS Transistor |
| Description | NXP Semiconductors Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET This high ruggedness dev... |
| Features |
• High drain--source avalanche energy absorption capability • Unmatched input and output allowing wide frequency range utilization • Device can be used single--ended or in a push--pull configuration • Characterized from 30 to 50 V for ease of use • Suitable for linear application • Integrated ESD pr... |
| File Size | 1.07MB |
| Datasheet |
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MRF1K50GN : NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout (W) Gps (dB) ηD (%) 87.5--108 (1,2) 230 (3,4) CW Pulse (100 μsec, 20% Duty Cycle) 1421 CW 1500 Peak 23.1 23.4 83.2 75.1 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin Test (W) .
MRF1K50N : NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout (W) Gps (dB) ηD (%) 87.5--108 (1,2) 230 (3,4) CW Pulse (100 μsec, 20% Duty Cycle) 1421 CW 1500 Peak 23.1 23.4 83.2 75.1 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin Test (W) .