NXP Semiconductors Technical Data
RF Power LDMOS
Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast,
sub--GHz aerospace and mobile radio applications.
Their unmatched input and
output design allows for wide frequency range use from 1.
8 to 500 MHz.
Typical Performance: VDD = 50 Vdc
Frequency (MHz)
Signal Type
Pout (W)
Gps (dB)
ηD (%)
87.
5--108 (1,2) 230 (3,4)
CW
Pulse (100 μsec, 20% Duty Cycle)
1421 CW 1500 Peak
23.
1 23.
4
83.
2 75.
1
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
Pin Test
(W)
...