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Part Number
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TK3R1E04PL |
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Manufacturer
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Toshiba |
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Description
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Silicon N-channel MOSFET |
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Published
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Aug 7, 2019 |
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Datasheet
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TK3R1E04PL
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Features
(1) High-speed switching (2) Small gate charge: QSW = 17.5 nC (typ.) (3) Small output charge: Qoss = 42 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) En...
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