IAUC120N04S6N009
OptiMOS™- 6 Power-
Transistor
Product Summary
Features • OptiMOS™ - power MOSFET for automotive applications
VDS RDS(on),max ID
40 V 0.
9 m 120 A
PG-TDSON-8
• N-channel - Enhancement mode - Normal Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)
1 1
• 100% Avalanche tested
Type IAUC120N04S6N009
Package PG-TDSON-8
Marking 6N04N009
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous drain current1)
Symbol
Conditions
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source vo...