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CDBJFSC101200-G

Part Number CDBJFSC101200-G
Manufacturer Comchip
Description Silicon Carbide Power Schottky Diode
Published Aug 13, 2019
Detailed Description Silicon Carbide Power Schottky Diode CDBJFSC101200-G Reverse Voltage: 1200 V Forward Current: 10 A RoHS Device Features...
Datasheet CDBJFSC101200-G




Overview
Silicon Carbide Power Schottky Diode CDBJFSC101200-G Reverse Voltage: 1200 V Forward Current: 10 A RoHS Device Features - Rated to 1200V at 10 Amps - Short recovery time.
- High speed switching possible.
- High frequency operation.
- High temperature operation.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF.
Circuit diagram K(3) K(1) A(2) TO-220F 0.
404(10.
25) 0.
388( 9.
85) 0.
130(3.
30) 0.
118(3.
00) 0.
112(2.
85) 0.
100(2.
55) 0.
264(6.
70) 0.
248(6.
30) 0.
039(1.
00) 0.
024(0.
60) 0.
055(1.
40) 0.
043(1.
10) 0.
031(0.
80) 0.
020(0.
50) 0.
602(15.
30) 0.
587(14.
90) 0.
154(3.
90) 0.
130(3.
30) 0.
539(13.
70) 0.
516(13.
10) 0.
201(5.
10) 0.
100(2.
55) 0.
126(3.
20) 0.
118(3.
00) 0.
18...






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