Dual Silicon Carbide Power
Schottky Diode
CDBGBSC201200-G
Reverse Voltage: 1200V Forward Current: 20A RoHS Device
Features
- Rated to 1200 at 20 Amps - Short recovery time - High speed switching possible - High frequency operation.
- High temperature operation.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF
0.
244(6.
20) 0.
213(5.
40)
0.
845(21.
46) 0.
819(20.
80)
TO-247
0.
640(16.
26) 0.
620(15.
75)
4
0.
209(5.
30) 0.
185(4.
70)
0.
144(3.
65) 0.
140(3.
55)
0.
216(5.
49) 0.
170(4.
32)
1 23
0.
177(4.
50) MAX.
Circuit diagram
C(4)
A(1) A(3) C(2)
0.
800(20.
32) 0.
780(19.
81)
0.
084(2.
13) 0.
065(1.
65)
0.
433(11.
00) 0.
425(10.
80)
0.
055(1.
40) 0.
039(1.
00)
Dimensions in inches...