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CDBJSC101200-G

Silicon Carbide Power Schottky Diode

Description

Silicon Carbide Power Schottky Diode CDBJSC101200-G Reverse Voltage: 1200 V Forward Current: 10 A RoHS Device Features - Rated to 1200V at 10 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit ...


Comchip

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