|
Part Number
|
TPW1R306PL |
|
Manufacturer
|
Toshiba |
|
Description
|
Silicon N-channel MOSFET |
|
Published
|
Aug 17, 2019 |
|
Datasheet
|
TPW1R306PL
|
Features
(1) High-speed switching (2) Small gate charge: QSW = 22 nC (typ.) (3) Small output charge: Qoss = 77.5 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.95 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) E...
Similar Datasheet