MOSFETs Silicon N-channel MOS (U-MOS-H)
TPW1R005PL
1.
Applications
• High-Efficiency DC-DC Converters • Switching Voltage
Regulators • Motor Drivers
2.
Features
(1) High-speed switching (2) Small gate charge: QSW = 34 nC (typ.
) (3) Small output charge: Qoss = 98 nC (typ.
) (4) Low drain-source on-resistance: RDS(ON) = 0.
75 mΩ (typ.
) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 45 V) (6) Enhancement mode: Vth = 1.
4 to 2.
4 V (VDS = 10 V, ID = 1.
0 mA)
3.
Packaging and Internal Circuit
TPW1R005PL
DSOP Advance
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2016-2019 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2016-07
2019-10-30 Rev.
2.
0
T...