RQ3E100GN 　　Nch 30V 21A Middle Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.
) ID PD 30V 11.
7mΩ ±21A 15W lFeatures 1) Low on - resistance.
2) High power package (HSMT8).
3) Pb-free lead plating ; RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested.
lOutline HSMT8 　 　　　　　　 lInner circuit 　 lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Basic ordering unit (pcs) 12 3000 Taping code TB Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) E100GN Parameter Symbol Value Unit Drain - Source voltage VDSS 30 V Continuous drain current Tc = 25°C Ta = 25°C ID*1 ID ±21 A ±10 A Pulsed drain...

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