Freescale Semiconductor Technical Data
RF Power LDMOS
Transistor
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET
Designed for handheld two--way radio applications with frequencies from
136 to 941 MHz.
The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in
handheld radio equipment.
Narrowband Performance (7.
5 Vdc, IDQ = 100 mA, TA = 25C, CW)
Frequency (MHz)
Gps D Pout (dB) (%) (W)
520 (1)
18.
3 73.
0
6.
0
Wideband Performance (7.
5 Vdc, TA = 25C, CW)
Frequency Pin Gps D Pout
(MHz)
(W) (dB) (%)
(W)
136–174
0.
19
440--520 (2)
0.
15
760--870 (3)
0.
20
Load Mismatch/Ruggedness
15.
5 1...