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monolithic dual n-channel JFETs H Siliconix Performance Curves NQP See Section 4 designed for • • • • Low and Medium Frequency DiHerential Amplifiers • High Input Impedance Amplifiers *ABSOLUTE MAXIMUM RATINGS (25°C) BENEFITS • Wide Dynamic Range IG Specified @ V DS = 20 V • Low Capacitance Ciss 4 pF TO·71 Sea Section 6 Any Lead-To-Case Voltage .
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±100 V Gate:Orail1 OJ Gate·~ource Voltage .
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-50 V Gate Current .
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" 50 rnA Total Device Dissipation at (Each Side) .
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250 mW 85°C Case Temperature (Both Sides) .
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500 mW Power Derating (Each Side) .
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86 mWrC (Both Sides) .
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4.
3 mWrC St...

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