SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY
TMS626162A 524288 BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS692B – JULY 1997 – REVISED MARCH 1998 D Organization 512K × 16 Bits × 2 Banks D 3.3-V Power Supply (± 10% Tolerance) D Two Banks for On-Chip Interleaving (Gapless Accesses) D High Bandwidth – Up to 100-MHz Data Rates D CAS Latency (CL) Programmable to Two or Three Cycles From...