matched dual n-channel JFETs designed for • • • • Differential Amplifiers • High Input Impedance Amplifiers ABSOLUTE MAXIMUM RATINGS (25°C) Gate-to-Gate Voltage .
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±80V Gate-Drain or Gate-Source Voltage .
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-40 V Gate Current .
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10 mA Device Dissipation (Each Side), T A =25°C (Derate 3 mWrC) .
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367mW Total Device Dissipation, T A =25°C (Derate 4 mWrC) .
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500mW Storage Temperature Range .
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-65 to +200°C H Siliconix Performance Curves NT See Section 4 BENEFITS • Matching Characteristics Specified • High Input Impedance IG = 1 pA Max (2N5906-9) TO·78 See Section 6 ~~0, 62 s, ...

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