DatasheetsPDF.com

H2682

Part Number H2682
Manufacturer Huashan
Description NPN SILICON TRANSISTOR
Published Oct 16, 2019
Detailed Description Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR H2682 █ APPLICATIONS . Audio Power Amplifie. █ ABSO...
Datasheet H2682




Overview
Shantou Huashan Electronic Devices Co.
,Ltd.
NPN SILICON TRANSISTOR H2682 █ APPLICATIONS .
Audio Power Amplifie.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation(Tc=25℃)…………………… 8W PC——Collector Dissipation(TA=25℃)…………………… 1.
2W VCBO——Collector-Base Voltage………………………… 180V VCEO——Collector-Emitter Voltage……………………… 180V VEBO——Emitter-Base Voltage……………………………… 5V IC——Collector Current……………………………………100mA TO-126ML 1―Emitter,E 2―Collector,C 3―Base,B █ ELECTRICAL CHARACTERISTICS(Ta=25℃) Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 180 V IC=100μA,...






Similar Datasheet






Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)