| Part Number | 2N6987 |
| Manufacturer | Microsemi |
| Title | MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR |
| Description | TECHNICAL DATA MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/558 Devices 2N6987 2N6987U 2N6988 Qualified Level ... |
| Features |
nt
VBE = 5.0 Vdc
IEBO
VEB = 3.5 Vdc
Min. 60
2N6987* TO- 116
2N6987U* 20 PIN LEADLESS
2N6988* 14 PIN FLAT PACK
*See appendix A for package outline
Max.
Unit
Vdc
10 µAdc 10 ηAdc
10 µAdc 50 ηAdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101 ...
|
| File Size | 56.32KB |
| Datasheet |
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2N698 : 2N698 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 60V 5.08 (0.200) typ. IC = 0.2A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 45° TO39 (TO205AD) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 60 0.2 Units V A - @ 10/0.15.
2N698 : OEM: Texas Instruments Transistor 2N720 Datasheet Silicon NPN Transistor 2N720 120V / 1A / 1,5W DATASHEET OEM – Texas Instruments Source: Texas Instruments Databook 1968/69 Datasheet Rev. 1.3 – 03/19 – data without warranty / liability OEM: Texas Instruments Transistor 2N720 Datasheet Datasheet Rev. 1.3 – 03/19 – data without warranty / liability OEM: Texas Instruments Transistor 2N720 Datasheet Datasheet Rev. 1.3 – 03/19 – data without warranty / liability OEM: Texas Instruments Transistor 2N720 Datasheet Datasheet Rev. 1.3 – 03/19 – data without warranty / liability OEM: Texas Instruments Transistor 2N720 Datasheet Datasheet Rev. 1.3 – 03/19 – data without warranty / l.
2N6987 : 2N6987, 2N6987U, 2N6988 Multiple (Quad) PNP Silicon Dual In-Line And Flatpack Switching Transistor Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/558 • TO-116, 20 PIN Leadless (U) and 14 PIN Flat Pack package types • Radiation Tolerant Levels M, D, P, L, and R Rev. V2 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Test Conditions IC = 10 mA dc VCB = 60 V dc VCB = 50 V dc VBE = 5.0 V dc VEB = 4.0 V dc VCE = 10 V dc; IC = 0.1 mA dc VCE = 10 V dc; IC = 1.0 mA dc VCE = 10 V dc; IC = 10 mA dc VCE = 10 V dc; IC = .
2N6987 : Data Sheet No. 2N6987 Type 2N6987 Geometry 0600 Polarity PNP Qual Level: JAN - JANS Features: • • • • • • An array of four independent PNP silicon switching transistors. Housed in a cerdip case. Also available in chip form using the 0600 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/558 which Semicoa meets in all cases. The Typ values are actual batch averages for Semicoa. Radiation Graphs available. Generic Part Number: 2N6987 REF: MIL-PRF-19500/558 Cerdip Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature.
2N6987U : 2N6987, 2N6987U, 2N6988 Multiple (Quad) PNP Silicon Dual In-Line And Flatpack Switching Transistor Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/558 • TO-116, 20 PIN Leadless (U) and 14 PIN Flat Pack package types • Radiation Tolerant Levels M, D, P, L, and R Rev. V2 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Test Conditions IC = 10 mA dc VCB = 60 V dc VCB = 50 V dc VBE = 5.0 V dc VEB = 4.0 V dc VCE = 10 V dc; IC = 0.1 mA dc VCE = 10 V dc; IC = 1.0 mA dc VCE = 10 V dc; IC = 10 mA dc VCE = 10 V dc; IC = .
2N6987U : TECHNICAL DATA MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/558 Devices 2N6987 2N6987U 2N6988 Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS (1) Ratings Collector-Emitter Voltage (4) Collector-Base Voltage (4) Emitter-Base Voltage (4) Collector Current Total Power Dissipation @ TA = +250C 2N6987 (2) 2N6987U (2) 2N6988 (3) Symbol VCEO VCBO VEBO IC PT Operating & Storage Junction Temperature Range Top, Tstg 1) Maximum voltage between transistors shall be ≥ 500 Vdc 2) Derate linearly 8.57 mW/0C above TA = +250C 3) Derate linearly 2.286 mW/0C above TA = +250C. 4) Ratings apply to each transistor in the array. Value 60 60 5.0 600 Units Vdc Vd.
2N6988 : 2N6987, 2N6987U, 2N6988 Multiple (Quad) PNP Silicon Dual In-Line And Flatpack Switching Transistor Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/558 • TO-116, 20 PIN Leadless (U) and 14 PIN Flat Pack package types • Radiation Tolerant Levels M, D, P, L, and R Rev. V2 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Test Conditions IC = 10 mA dc VCB = 60 V dc VCB = 50 V dc VBE = 5.0 V dc VEB = 4.0 V dc VCE = 10 V dc; IC = 0.1 mA dc VCE = 10 V dc; IC = 1.0 mA dc VCE = 10 V dc; IC = 10 mA dc VCE = 10 V dc; IC = .
2N6988 : TECHNICAL DATA MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/558 Devices 2N6987 2N6987U 2N6988 Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS (1) Ratings Collector-Emitter Voltage (4) Collector-Base Voltage (4) Emitter-Base Voltage (4) Collector Current Total Power Dissipation @ TA = +250C 2N6987 (2) 2N6987U (2) 2N6988 (3) Symbol VCEO VCBO VEBO IC PT Operating & Storage Junction Temperature Range Top, Tstg 1) Maximum voltage between transistors shall be ≥ 500 Vdc 2) Derate linearly 8.57 mW/0C above TA = +250C 3) Derate linearly 2.286 mW/0C above TA = +250C. 4) Ratings apply to each transistor in the array. Value 60 60 5.0 600 Units Vdc Vd.
2N6988 : Data Sheet No. 2N6988 Type 2N6988 Geometry 0600 Polarity PNP Qual Level: JAN - JANS Features: • • • • • • General purpose silicon transistor for switching and amplifier applications. Housed in a 14-Lead Flat Package. Also available in chip form using the 0600 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/558 which Semicoa meets in all cases. The Typ values are actual batch averages for Semicoa. Radiation Graphs available. Generic Part Number: 2N6988 REF: MIL-PRF-19500/558 14L-FlatPack Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Tem.
2N6989 : Data Sheet No. 2N6989 Type 2N6989 Geometry 0400 Polarity NPN Qual Level: JAN - JANS Features: • • • • • • An array of four independent NPN silicon switching transistors. Housed in a cerdip case. Also available in chip form using the 0400 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/559 which Semicoa meets in all cases. The Typ values are actual batch averages for Semicoa. Radiation Graphs available. Generic Part Number: 2N6989 REF: MIL-PRF-19500/559 Cerdip Maximum Ratings TC = 25oC unless otherwise specified Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature .
2N6989 : 2N6989, 2N6989U, 2N6990 Multiple (Quad) NPN Silicon Dual In-Line And Flatpack Switching Transistor Features • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF-19500/559 • TO-116, 20 PIN Leadless (U) and 14 PIN Flat Pack package types • Radiation Tolerant Levels M, D, P, L, and R Rev. V3 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current On Characteristics Forward Current Transfer Ratio Test Conditions IC = 10 mA dc VCB = 75 V dc VCB = 60 V dc VEB = 6.0 V dc VEB = 4.0 V dc VCE = 10 V dc; IC = 0.1 mA dc VCE = 10 V dc; IC = 1.0 mA dc VCE = 10 V dc; IC = 10 mA dc VCE = 10 V dc;.
2N6989 : TECHNICAL DATA MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/559 Devices 2N6989 2N6989U 2N6990 Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS (1) Ratings Collector-Emitter Voltage (3) Collector-Base Voltage (3) Emitter-Base Voltage (3) Collector Current (3) Total Power Dissipation @ TA = +250C 2N6989(2) 2N6989U(2) 2N6990(2) Symbol VCEO VCBO VEBO IC PD Value 50 75 6.0 800 1.5 1.0 0.4 Operating & Storage Junction Temperature Range Top, Tstg -65 to +200 1) Maximum voltage between transistors shall be ≥ 500 Vdc 2) Derate linearly 8.57 mW/0C above TA = +250C for 2N6989 and 2N6989U Derate linearly 2.286 mW/0C above TA.
2N6989U : 2N6989, 2N6989U, 2N6990 Multiple (Quad) NPN Silicon Dual In-Line And Flatpack Switching Transistor Features • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF-19500/559 • TO-116, 20 PIN Leadless (U) and 14 PIN Flat Pack package types • Radiation Tolerant Levels M, D, P, L, and R Rev. V3 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current On Characteristics Forward Current Transfer Ratio Test Conditions IC = 10 mA dc VCB = 75 V dc VCB = 60 V dc VEB = 6.0 V dc VEB = 4.0 V dc VCE = 10 V dc; IC = 0.1 mA dc VCE = 10 V dc; IC = 1.0 mA dc VCE = 10 V dc; IC = 10 mA dc VCE = 10 V dc;.
2N6989U : TECHNICAL DATA MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/559 Devices 2N6989 2N6989U 2N6990 Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS (1) Ratings Collector-Emitter Voltage (3) Collector-Base Voltage (3) Emitter-Base Voltage (3) Collector Current (3) Total Power Dissipation @ TA = +250C 2N6989(2) 2N6989U(2) 2N6990(2) Symbol VCEO VCBO VEBO IC PD Value 50 75 6.0 800 1.5 1.0 0.4 Operating & Storage Junction Temperature Range Top, Tstg -65 to +200 1) Maximum voltage between transistors shall be ≥ 500 Vdc 2) Derate linearly 8.57 mW/0C above TA = +250C for 2N6989 and 2N6989U Derate linearly 2.286 mW/0C above TA.
2N6989U : The JANTX2N6989U is a hermetically sealed, ceramic surface-mount device, consisting of four individual silicon NPN transistors. The 20 pin ceramic package is ideal for designs where board space and device weight are important design considerations. Typical screening and lot acceptance tests are provided on page 13-4. The burn-in condition is VCB = 30 V, PD = 250 mW each transistor, TA = 25o C. Refer to MIL-PRF-19500/559 for complete requirements. When ordering parts without processing, do not use a JAN prefix. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 15-20 (972)323-2200 Fax (972)323-2396 Type JANTX, JANTXV, 2N6989U Electrical Characterics (TA = 25o C unless ot.