2N3792

2N379 : 76 A2N3 (GERMANIUM) For Spe~ifications, See 2N350A Data. 2N378 thru 2N380(GERlt\ANIUM) 2N459,A C(A10S-3)E1 l~l~... · PNP germanium power transistors for general purpose power amplifier and sWitching applications. MAXIMUM RATINGS Rating Symbol 2N378 2N379 2N380 2N459 2N459A Unit Collector-Emitter Voltage VCEO Collector-Emitter Voltage (VBE = 1. 5 V) (VBE = 1.0 V) VCEX Collector..Einitter Voltage VCES Collector-Base VOltage VCB -Emitter-Base Voltage Collector Current. VEB IC Operating Junction Temperature Range Total Device Dissipation @TC = 25° C TJ PD 20 40 - 40 30 60 60 Vdc Vdc 80 60 -- - - 105 105 - - 70 70 Vdc - - - 105 Vdc - - 10 25 Vdc 5.0 Adc -65 to +110 .

2N3790 : ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for medium-speed switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UN.

2N3790 : The CENTRAL SEMICONDUCTOR 2N3789, 2N3790, 2N3791, and 2N3792 are silicon PNP power transistors, manufactured by the epitaxial planar process, designed for medium speed switching and amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg JC 2N3789 2N3791 60 2N3790 2N3792 80 60 80 7.0 10 4.0 150 -65 to +200 1.17 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N3789 2N3791 SYMBOL TEST CONDITION.

2N3790 : : SILICON PNP TRIPLE DIFFUSED TYPE 33 POWER AMPLIFIER, SWITCHING CIRCUIT AND REGULATOR APPLICATIONS. FEATURES . High Gain and Excellent hFE Linearity: hFE=15(Min.) @ VC E=-2V, Ic=-3A Low Saturation Voltage: VcE(sat)=-1.0V(Max.) @ I C=-4A, Ib=-0.4A Unit in mm MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak Base Current Collector Power Dissipation (Tc=25°C)Derate Linearly above 25 & C Junction Temperature % Storage Temperature Range SYMBOL VCBO VCEO VEBO IC I CM IB L Stg RATING -80 -80 -7 -10 -15 -4 150 0.86 200 -65~ 200 UNIT u w/ c 1. BASE 2. EMITTER COLLECTOR (CASE) TO—2 4MA/T0— TC—.

2N3790 : 2N3789 thru 2N3792 (SILICON) CASEll~.(TO-3) ~ PNP silicon power transistors for medium-speed switching and amplifier applications. Complement to NPN type 2N3713 thru 2N3716. Collector connected to case MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Collector-BaSe Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Peak) Base Current (Continuous) Power Dissipation Thermal Resistance Junction Operating and Storage Temperature Range VCB VCEO VEB IC IC IB PD iJJC TJ, Tstg 2N3789 2N3791 60 60 7.. 0 10 10 4.0 150 1.17 2N3790 2N3792 80 80 7.0 10 10 4.0 150 1.17 -65 to +200 Unit Volts Volts Volts Amp Amp Amp Watts °C!W °c ELECTR.

2N3790 : PNP 2N3789 – 2N3790 – 2N3791 – 2N3792 EPITAXIAL-BASE TRANSISTORS The 2N3789, 2N3790, 2N3791 and 2N3792 are silicon epitaxial-base PNP power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The 2N3713, 2N3714, 2N3715 and 2N3716 complementary NPN types are respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Collector-BaseVoltage Ratings IE = 0 2N3789 2N3791 2N3790 2N3792 2N3789 2N3791 2N3790 2N3792 Value -80 Unit V -100 -60 V -80 -7 -10 -4 150 -65 to +200 V A A W °C VCEO VEBO IC IB PD TJ TS Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current IB = 0 IC = 0 www.DataSheet.net/ Total De.

2N3791 : The CENTRAL SEMICONDUCTOR 2N3789, 2N3790, 2N3791, and 2N3792 are silicon PNP power transistors, manufactured by the epitaxial planar process, designed for medium speed switching and amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg JC 2N3789 2N3791 60 2N3790 2N3792 80 60 80 7.0 10 4.0 150 -65 to +200 1.17 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N3789 2N3791 SYMBOL TEST CONDITION.

2N3791 : ·With TO-3 package ·Complement to type 2N3715 ,2N3716 ·Excellent safe operating area APPLICATIONS Designed for medium-speed switching and amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Emitter Collector Product Specification 2N3791 2N3792 Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage 2N3791 2N3792 Open emitter VCEO Collector-emitter voltage 2N3791 2N3792 Open base VEBO Emitter-base voltage Open collector IC Collector current IB Base current PD Total Power Dissipation TC=25℃ Tj Junction temperature Tstg Storage temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER R(th) j.

2N3791 : TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/379 Devices 2N3791 2N3792 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +1000C (2) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS VCEO VCBO VEBO IB IC PT TJ, Tstg Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly @ 28.57 mW/0C for TA +250C 2) Derate linearly @ 0.857 mW/0C for TC +1000C 2N3791 2N3792 60 80 60 80 7.0 4.0 10 5.0 85.7 -65 to +200 Max. 1.17 ELECTRICAL CHAR.

2N3791 : 2N3789 thru 2N3792 (SILICON) CASEll~.(TO-3) ~ PNP silicon power transistors for medium-speed switching and amplifier applications. Complement to NPN type 2N3713 thru 2N3716. Collector connected to case MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Collector-BaSe Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Peak) Base Current (Continuous) Power Dissipation Thermal Resistance Junction Operating and Storage Temperature Range VCB VCEO VEB IC IC IB PD iJJC TJ, Tstg 2N3789 2N3791 60 60 7.. 0 10 10 4.0 150 1.17 2N3790 2N3792 80 80 7.0 10 10 4.0 150 1.17 -65 to +200 Unit Volts Volts Volts Amp Amp Amp Watts °C!W °c ELECTR.

2N3791 : 2N3791 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ 2/1 (VCE / IC) w w w .D t a S a e h t e U 4 VCEO = 60V All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. .c 29.9 (1.177) 30.4 (1.197) m o 38.61 .

2N3791 : PNP 2N3789 – 2N3790 – 2N3791 – 2N3792 EPITAXIAL-BASE TRANSISTORS The 2N3789, 2N3790, 2N3791 and 2N3792 are silicon epitaxial-base PNP power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The 2N3713, 2N3714, 2N3715 and 2N3716 complementary NPN types are respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Collector-BaseVoltage Ratings IE = 0 2N3789 2N3791 2N3790 2N3792 2N3789 2N3791 2N3790 2N3792 Value -80 Unit V -100 -60 V -80 -7 -10 -4 150 -65 to +200 V A A W °C VCEO VEBO IC IB PD TJ TS Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current IB = 0 IC = 0 www.DataSheet.net/ Total De.

2N3791 : at any time, without notice. VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is grant.

2N3792 : 2N3792 MECHANICAL DATA Dimensions in mm(inches) 40.01 (1.575) Max. PNP SILICON EPITAXIAL BASE POWER TANSISTORS 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 30.40 (1.197) 29.90 (1.177) 12.19 (0.48) 11.18 (0.44) APPLICATIONS Linear Power and Switching Applications 1.63 (0.064) 1.52 (0.060) 2 11.18 (0.440) 10.67 (0.420) 4.09 (0.161) 3.84 (0.151) 2 Pls 1 16.97 (0.668) 16.87 (0.664) TO3 PIN 1 — Base PIN 2 — Emitter Case is Collector. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO(sus) VEBO IC IB PTOT Tstg, Tj, Collector – Base Voltage(IE = 0) Collector – Emitter Voltage (IB = 0) Emitt.

2N3792 : The CENTRAL SEMICONDUCTOR 2N3789, 2N3790, 2N3791, and 2N3792 are silicon PNP power transistors, manufactured by the epitaxial planar process, designed for medium speed switching and amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg JC 2N3789 2N3791 60 2N3790 2N3792 80 60 80 7.0 10 4.0 150 -65 to +200 1.17 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N3789 2N3791 SYMBOL TEST CONDITION.

2N3792 : TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/379 Devices 2N3791 2N3792 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +1000C (2) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS VCEO VCBO VEBO IB IC PT TJ, Tstg Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly @ 28.57 mW/0C for TA +250C 2) Derate linearly @ 0.857 mW/0C for TC +1000C 2N3791 2N3792 60 80 60 80 7.0 4.0 10 5.0 85.7 -65 to +200 Max. 1.17 ELECTRICAL CHAR.