2N5153L

2N5153 : The 2N5151 and the 2N5153 are silicon expitaxial planar PNP transistors in jedec TO-39 metal case intended for use in switching applications. The complementary NPN types are the 2N5152 and 2N5154 respectively 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. 5.08 (0.200) typ. 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 45˚ TO-39 Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25°c unless otherwise stated VCBO VCEO VEBO IC IC(PK) IB Ptot Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Peak Collector Current .

2N5153 : www.DataSheet4U.com TECHNICAL DATA PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 Devices 2N5151 2N5151L 2N5153 2N5153L Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC(3, 4) PT Tj, Tstg Symbol RθJC All Units 80 100 5.5 2.0 1.0 11.8 -65 to +200 Max. 15 Units Vdc Vdc Vdc Adc W W °C Unit C/W TO- 5* 2N5151L, 2N5153L @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 5.7 mW/0C for TA +250C 2) Derate linearly 66.7 mW/.

2N5153 : 2N5151, 2N5151L, 2N5153, 2N5153L NPN Power Silicon Transistor Features  Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF19500/545  TO-5 Package: 2N5151L, 2N5153L  TO-39 (TO-205AD) Package: 2N5151, 2N5153 Rev. V1 Electrical Characteristics Parameter Test Conditions Symbol Units Min. Max. Off Characteristics Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current IC = 100 mAdc, IB = 0 VEB = 4.0 Vdc, IC = 0 VEB = 5.5 Vdc, IC = 0 VCE = 60 Vdc, VBE = 0 VCE = 100 Vdc, VBE = 0 VCE = 40 Vdc, IB = 0 V(BR)CEO Vdc IEBO µAdc mAdc ICES µAdc mAdc ICEO µAdc 80 — — — — .

2N5153 : 2N5151, 2N5151L, 2N5153, 2N5153L PNP Power Silicon Transistor Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/545 • TO-5 Package: 2N5151L, 2N5153L • TO-39 (TO-205AD) Package: 2N5151, 2N5153 Rev. V5 Electrical Characteristics (TA = 25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current IC = -100 mA dc, IB = 0 VEB = -4.0 V dc, IC = 0 VEB = -5.5 V dc, IC = 0 VCE = -60 V dc, VBE = 0 VCE = -100 V dc, VBE = 0 VCE = -40 V dc, IB = 0 V(BR)CEO V dc IEBO1 IEBO2 ICES1 ICES2 µA d.

2N5153 : .

2N5153HR : The 2N5153HR is a bipolar transistor able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the total ionizing dose (TID). Qualified as per ESCC 5204/002 specification and available in SMD.5 and TO-257 hermetic packages, it is specifically recommended for space and harsh environment applications and suitable for power suppliers, battery switch and linear bias supply circuits. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Product summary Device 2N5153ESYHRx 2N5153RESYHRx 2N5153RSHRx 2N5153SHRx 2N5153RSRHRx 2N5153SRHRx Product summary Qualifica.

2N5153L : 2N5151, 2N5151L, 2N5153, 2N5153L NPN Power Silicon Transistor Features  Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF19500/545  TO-5 Package: 2N5151L, 2N5153L  TO-39 (TO-205AD) Package: 2N5151, 2N5153 Rev. V1 Electrical Characteristics Parameter Test Conditions Symbol Units Min. Max. Off Characteristics Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current IC = 100 mAdc, IB = 0 VEB = 4.0 Vdc, IC = 0 VEB = 5.5 Vdc, IC = 0 VCE = 60 Vdc, VBE = 0 VCE = 100 Vdc, VBE = 0 VCE = 40 Vdc, IB = 0 V(BR)CEO Vdc IEBO µAdc mAdc ICES µAdc mAdc ICEO µAdc 80 — — — — .

2N5153L : www.DataSheet4U.com TECHNICAL DATA PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 Devices 2N5151 2N5151L 2N5153 2N5153L Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC(3, 4) PT Tj, Tstg Symbol RθJC All Units 80 100 5.5 2.0 1.0 11.8 -65 to +200 Max. 15 Units Vdc Vdc Vdc Adc W W °C Unit C/W TO- 5* 2N5151L, 2N5153L @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 5.7 mW/0C for TA +250C 2) Derate linearly 66.7 mW/.

2N5153U3 : 2N5153U3 NPN Power Silicon Transistor Features  JANS and JANSR Qualified to MIL-PRF-19500/544  JEDEC Registered 2N5153  Lightweight & Low Power  Ideal for Space, Military, and Other High Reliability Applications  Surface Mount U3 Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Emitter - Base Voltage Non-Saturation Emitter - Base Saturation Voltage Dynamic Characteristics IC = 100 mAdc, IB = .

2N5153U3 : 2N5151U3 & 2N5153U3 PNP Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF-19500/545 • Lightweight & Low Power • Ideal for Space, Military, and Other High Reliability Applications • Surface Mount U3 Package Rev. V5 Electrical Characteristics (TC = +25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Base - Emitter Voltage (Non-Saturated) Base - Emitter Saturation Voltage IC = -100 mA dc; IB = 0 VEB = -4.0 .