FDMT80060DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET August 2015 FDMT80060DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET 60 V, 292 A, 1.
1 mΩ Features General Description „ Max rDS(on) = 1.
1 mΩ at VGS = 10 V, ID = 43 A „ Max rDS(on) = 1.
3 mΩ at VGS = 8 V, ID = 37 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ Low profile 8x8mm MLP package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process.
Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excel...

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