Part Number
|
G30M65DF2 |
Manufacturer
|
STMicroelectronics |
Description
|
Trench gate field-stop IGBT |
Published
|
Nov 19, 2019 |
Detailed Description
|
STGP30M65DF2
Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220 package
Datasheet - production data...
|
Datasheet
|
G30M65DF2
|
Overview
STGP30M65DF2
Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220 package
Datasheet - production data
TAB
TO-220
1 23
Figure 1: Internal schematic diagram
Features
6 µs of minimum short-circuit withstand time VCE(sat) = 1.
55 V (typ.
) @ IC = 30 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode
Applications
Motor control UPS PFC
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where...
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