Transistors
Power
Transistor (−120V, −1.
5A)
2SB1236
2SB1236
zFeatures 1) High breakdown voltage.
(BVCEO = −120V) 2) Low collector output capacitance.
(Typ.
30pF at VCB = −10V) 3) High transition frequency.
(fT = 50MHz) 4) Complements the 2SD1857.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
−120
Collector-emitter voltage
VCEO
−120
Emitter-base voltage
VEBO
−5
Collector current
−1.
5 IC
−3
Collector power dissipation
PC
1
Junction temperature
Tj 150
Storage temperature
Tstg
−55 to +150
∗1 Single pulse Pw = 100ms ∗2 Printed circuit board 1.
7mm thick, collector plating 1cm2 or larger.
Unit
V
V
V
A (DC)
∗A (Pulse) 1 W ∗2
°C °C
...