SUD19N20-90 Vishay Siliconix N-Channel 200 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.
090 at VGS = 10 V 0.
105 at VGS = 6 V ID (A) 19 17.
5 TO-252 FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch D Drain Connected to Tab GDS Top View Ordering Information: SUD19N20-90-E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Contin...

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