CYStech Electronics Corp.
Low Vcesat
NPN Epitaxial Planar
Transistor
BTD1805BT3
Spec.
No.
: C820T3 Issued Date : 2007.
07.
09 Revised Date : Page No.
: 1/ 4
Description
The device is manufactured in
NPN planar technology by using a “Base Island” layout.
The resulting
transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features
• Very low collector-to-emitter saturation voltage • Fast switching speed • High current gain characteristic • Large current capability • Pb-free package
Applications
• CCFL drivers • Voltage
regulators • Relay drivers • High efficiency low voltage switching applications
Symbol
BTD1805BT3
Outline
TO-126
B：Base C：Collector E：...