CYStech Electronics Corp.
Silicon
NPN Epitaxial Planar
Transistor
BTD1858A3
Spec.
No.
: C856A3 Issued Date : 2006.
06.
05 Revised Date : 2006.
06.
08 Page No.
: 1/9
Description
• High BVCEO • High current capability • Pb-free package
Symbol
BTD1858A3
Outline
TO-92
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃
Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PD Tj Tstg
BTD1858A3
ECB
Limits
180 180 5 1.
5
3 750 150 -55~+150
Unit
V V V A A mW
°C °C
CYStek Product Specification
CYStech Electronic...