CYStech Electronics Corp.
Silicon
NPN Epitaxial Planar
Transistor
BTD1858T3
Spec.
No.
: C856T3 Issued Date : 2007.
03.
20 Revised Date : Page No.
: 1/7
Description
• High BVCEO • High current capability • Pb-free package
Symbol
BTD1858T3
Outline
TO-126
B：Base C：Collector E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Note : Single Pulse , Pw≦380μs,Duty≦2%.
BTD1858T3
Symbol
VCBO VCEO VEBO
IC...