AONV070V65G1
650V Enhancement Mode GaN
Transistor
Features
650V Enhancement Mode GaN
Transistor Normal-off Design Ultra-low Qg No Qrr Low Inductance
Applications
Server Power Supplies High-Frequency Converters Resonant Topologies
Product Summary
VDS @ TJ, max IDM RDS(ON) Qg, typ Eoss @ 400V
650V 45A 70mΩ 6.
9nC 6µJ
Pin Configuration and Pin Names
DFN 8x8
Top View
Bottom View
Pin Names
Gate Drain
Kelvin Source Source Thermal Pad (Connected to Source)
8 1, 2, 3, 4
7 5, 6 TP
D 1, 2, 3, 4
8 G
SK 7
5, 6 S
Absolute Maximum Ratings
Exceeding the Absolute Maximum Ratings may damage the device.
TA = 25°C, unless otherwise stated.
Symbol
Parameter
Maximum
VDS Drain-Sou...