CYStech Electronics Corp.
High Voltage
NPN Epitaxial Planar
Transistor
Built-in Base Resistor
BTD2498N3
Spec.
No.
: C899N3 Issued Date : 2009.
12.
23 Revised Date : Page No.
: 1/6
Description
• High breakdown voltage.
(BVCEO=400V) • Low saturation voltage, typical VCE(sat) =0.
13V at Ic/IB =20mA/1mA.
• Complementary to BTB1498N3 • Pb-free package
Equivalent Circuit
BTD2498N3
Outline
SOT-23
B : Base C : Collector E : Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC Pd ...